MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevent a buried-in Al wirings from corroding by a method wherein a protective insulating film is formed not to expose the sides of an underlaid insulating film while a scribing region is regulated within a range not to be formed of the protective insulating film. CONSTITUTION:An interconnection is formed on a semiconductor substrate 1 formed of a semiconductor element on a main surface through the intermediary of a primer insulating film 2. A protective insulating film 4 formed covering the interconnection is divided into multiple chips by scribing process. At this time, the insulating film 4 is formed not to expose the sides of the primer insulating film 2 while a scribing region 6 is regulated within the range not to be formed of the insulating film 4. Through these procedures, step difference parts in contact with the region 6 are covered with the insulating film 4 to prevent the buried-in Al wirings from corroding.