| 摘要 |
PURPOSE: To provide a conductive structure excellent in adhesiveness which has a barrier function and exhibits low contact resistance by containing a lower titanium nitride layer and a refractory metal layer over it. CONSTITUTION: An interconnection stack 100, comprising a titanium nitride layer 40 and a refractory metal layer 50, for example, a tungsten or molybdenum layer, over it, connects a lower lead wire 20 to an upper lead wire 200. In this structure, the lead wire 20 is bonded on a worked substrate 10 for patterning, and a bonded passivation layer 30 is anisotropically etched to expose a part of the wire 20 under it, and then the titanium nitride layer 40 and the tungsten layer 50 are formed. The film is etched to remove the part higher than the surface of the passivation layer 30, and the upper lead wire 200 is bonded to the interconnection stack 100 so that a least a part of the upper lead wire 200 contacts thereto, for patterning. Thereby a conductive structure body which exhibits high adhesion and low contact resistance is obtained. |
