| 摘要 |
PURPOSE:To improve the chemical resistance of an inorg. oxide layer, the film quality of transparent electrodes and workability such as etching by subjecting an overcoating layer to a reverse sputtering treatment, then laminating the inorg. oxide layer thereon and subjecting the inorg. oxide layer to the reverse sputtering treatment as well to form the transparent electrodes. CONSTITUTION:Filters of red R, green G and blue B are provided on a transparent substrate 11 consisting of glass, etc., by using gelatin as a coating material to form color filters 12; thereafter the overcoating layer 13 is formed of the same gelatin material thereof. Said layer is then subjected to the reverse sputtering in an atmosphere of gaseous argon contg. oxygen and thereafter, an SiO2 film is deposited by forward sputtering thereon to form the inorg. oxide layer 14. The surface of this layer is subjected to the reverse sputtering as well. Processing to the smaller sizes is thereby enabled at the time of etching and the oxidation resistance of the inorg. oxide layer 14 is improved. Damaging of the color filters is obviated even under the conditions of slight overetching. |
