| 摘要 |
PURPOSE:To shorten the etching time for a radiation sensitive thin film layer and to improve the throughput of optical radiation lithography, by projecting synchrotron emitting light and low kinetic energy particles to the radiation sensitive thin film layer at the same time, and performing etching. CONSTITUTION:Light 3 emitted from an electron storing ring is projected on a sample, in which resist 2 is applied on a silicon substrate 1 through a window 4 made of beryllium. At the same time, low kinetic energy particles 6 from an RF type ion source 5 are projected. The low kinetic energy particles 6, which are projected at the same time, are the particles having the energy so that sputtering due to the projection of the particles does not occur. When kinetic energy of the low kinetic energy particles 6, which are projected at the same time, are imparted to atoms or molecules constituting the resist, the bonding in molecule chains forming the macromolecules of the reist is cut, or a bonding energy is reduced. |
