SELECTIVE FORMATION OF SILICON DIOXIDE FILM

摘要

PURPOSE:To selectively form a silicon dioxide film having high working accuracy at a low production cost when an aq. hydrosilicofluoric acid soln. contg. silicon dioxide in a supersatd. state is brought into contact with a base material to deposit a silicon dioxide film on the surface of the base material, by forming a patterned mask of an org. substance on the surface of the base material before the contact. CONSTITUTION:An aq. hydrosilicofluoric acid soln. contg. silicon dioxide in a supersatd. state as a treating soln. is brought into contact with a base material to deposit a silicon dioxide film on the surface of the base material. At this time, a patterned mask of an org. substance is formed on the surface of the base material and the base material is brought into contact with the treating soln. The org. substance is preferably photosensitive resin and patterning is preferably carried out by photolithography from the viewpoint of working accuracy.