| 摘要 |
PURPOSE:To reduce a standby current increased due to a heat treatment at the time of assembling by irradiating a semiconductor chip having a high resistance element after assembling with an ultraviolet ray. CONSTITUTION:After an element 10 having a plasma nitride film 16 is bonded to a chip at 450-480 deg.C, hydrogen diffused from the film 16 into a high resistance polycrystalline silicon 14 is separated by irradiating it with an ultraviolet ray, a high resistance polycrystalline silicon 14 is enhanced in its, resistance, thereby reducing a standby current. Then, a frame is wired to a chip, and a whole lead frame is sealed with molding resin. |
