| 摘要 |
PURPOSE:To obtain a different resistance value by altering the gap of first and second thin metal film patterns. CONSTITUTION:A semiconductor device includes a semiconductor substrate 10, a first insulating film 11, a first thin metal film pattern 12, a second thin metal film pattern 13, a semiconductor film pattern 14, a second insulating film 15 and a metal electrode 16. Contact windows are formed at a desired interval outside the relative direction of the first and second thin metal film patterns on the first and second thin metal film patterns 12, 13 to determine a resistance value by X/Y, the pattern length X of the pattern 14 to the pattern width Y. Accordingly, even if the sizes of the patterns 14 are equal, different resistance values can be obtained by altering the pattern interval X of the patterns 12 and 13. |
