| 摘要 |
<p>PURPOSE:To provide a semiconductor which is effective, highly accurate, and superior in quality by exposing a plurality of target marks in advance to a chip where circuit patterns are exposed, thereby performing the alignment of the circuit patterns in a reticle as well as in the chip with a target mark at least among a plurality of the target marks. CONSTITUTION:A and B groups among a plurality of target marks are exposed at a previous layer and these target mark groups are handled as being independent to come to X-Y and respective target marks 11-14, 21-24, 11'-14', and 21'-24 are memorized to an operational memory system. In the case of breakage of marks because of the process of previous layer or in the case of shot around a wafer, if the target marks are not exposed or the marks can not be detected even though they are detected in shot chips as shown by broken line parts, the target marks are altered one after another and such an alteration of target marks allows a X-Y stage 3 or a pattern detection system 4 to operate and perform detection.</p> |
