| 摘要 |
PURPOSE:To execute fundamental lateral mode oscillation, and to operate a P type substrate buried laser with high efficiency and a high output by positioning an N type InP layer in a multilayer structue crystal at a section lower than the end section of an active layer in mesa structure. CONSTITUTION:An active layer 3 takes the so-called crescent shape in a section vertical to the direction that beams are wave-guided. An N type InP layer (an N type InP buried layer) 5 in a multilayer structure crystal constituting a buried layer, which is burned brought into contact with both sides of striped mesa structure formed by double hetero structure containing the active layer 3 and consists of InP or InGaAsP having a function which constricts currents and forms an optical waveguide, is positioned at a section lower than the end section of the active layer 3 in mesa structure. Accordingly, fundamental lateral mode oscillation is executed, and a P type substrate buried laser is operated with high efficiency and a high output, and the titled semiconductor laser element is extremely effective as a light source for optical communication. |
