| 摘要 |
PURPOSE:To prevent the generation of defective picture elements by defective insulating films by using photosensitive polyimide to form a passivation film or both of the passivation film and the gate insulating film. CONSTITUTION:A TFT 13 is constituted by forming a picture element electrode 10, a gate electrode 2, the gate insulating film 3, a semiconductor layer 4, and an n<+> layer 5 on a transparent glass substrate 1, then forming a source electrode 6 and a drain electrode 7 in succession thereof. A polyimide soln. prepd. by dissolving the photosensitive heat resistant polyimide in a solvent is spin-coated on the TFT and is patterned by a photolithographic method, by which the passivation film 14 consisting of the polyimide is formed. The polymn. as polyimide is finished with this photosensitive polyimide and the film thereof can be formed simply by evaporating the solvent and drying the film after coating of the soln. on the prescribed position and, therefore, the film formation is possible even at <=150 deg.C. The generation of the defective picture elements by the defective insulating films is thereby decreased. |
