发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To select only one resonant wavelength so as to make a laser operate in a narrow oscillating laser ray with a single wavelength by a method wherein a Mach-Zehnder interference type waveguide path is provided in a semiconductor laser resonator. CONSTITUTION:Carriers are injected into a light emitting region A which has an optical gain. A Mach-Zehnder interference type waveguide path region B is ramified into a waveguide path I(b1-b3-b5) and a waveguide path II(b2-b4-b6) which are different from each other in a refractive index, and similar to a structure of the Mach-Zehnder interferometer. A phase adjusting waveguide path region C performs the phase adjustment of the waveguide paths I and II simultaneously. The waveguide paths I and II of the region B are disposed on one extension of a waveguide path a which is optically connected with a light emitting layer 2 of the light emitting region A. Carriers injected into the region B or the voltage impressed on the region B is made to vary so as to change a wavelength path layer 3 in a refractive index. In addition, 5 and 6 are reflective end faces which constitute a laser resonator.
申请公布号 JPS6424482(A) 申请公布日期 1989.01.26
申请号 JP19870179897 申请日期 1987.07.21
申请人 KOKUSAI DENSHIN DENWA CO LTD <KDD> 发明人 UKO KATSUYUKI;SAKAI KAZUO;MATSUSHIMA YUICHI
分类号 G02B6/12;H01S5/00;H01S5/0625;H01S5/10;H01S5/125 主分类号 G02B6/12
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