| 摘要 |
PURPOSE:To construct a functional film, excellent in film quality, high in responsiveness to doping, and easily controllable with stability in terms of conductivity even when deposited on a substrate built of an inexpensive material by a method wherein the number of hydrogen atoms and the rate of crystal grain region per volume are kept within specified limits in a ZnSe film. CONSTITUTION:In a ZnSe:H film where hydrogen atoms occupy 1-4atom%, the crystal grain region occupies 65-85volume%. In this functional deposited film, dangling bond among atoms constituting the film is reduced to a desired level. With such a film, introduction is possible of a P-type dopant, highly effective introduction of such a dopant may be accomplished quite easily, stress is reduced to a desired level, and electrical and mechanical characteristics are quite excellent. An N-type dopant may also be introduced into a ZnSe:H with ease, which produces an excellent functional deposited film of the N-type conductivity. On a supporting substrate 101, an N-type semiconductor layer 102, a P-type semiconductor layer 103, and an electrode 104 are provided, in that order, for the completion of a photosensor 100. |
