发明名称 MANUFACTURE OF BARIUM TITANATE SEMICONDUCTOR PORCELAIN
摘要 PURPOSE:To suppress the fluctuation rate of the normal temperature resistance value by using SiO2 with the specified grain size for BaTiO3 and it in the atmosphere with the oxygen partial pressure of 10%-30%. CONSTITUTION:SiO2 with its grain size controlled to 3mum or below is added as an additive, and BaTiO3 is fired in the atmosphere with the oxygen partial pressure of 10%-30%. If the grain size of SiO2 is controlled to 3mum or below the largest, the fluctuation rate of the normal temperature resistance value can be decreased, if the oxygen partial pressure exceeds 30%, the fluctuation rate of the normal temperature resistance value exceeds 5% like in the past, if the oxygen partial pressure is below than 10%, the fluctuation rate of the normal temperature resistance value exceeds 5% likewise. The fluctuation rate of the normal temperature resistance value can be thereby suppressed small by specifying the grain size of SiO2 and the oxygen partial pressure.
申请公布号 JPS6424302(A) 申请公布日期 1989.01.26
申请号 JP19870179460 申请日期 1987.07.17
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MATSUSHIMA SUSUMU
分类号 C04B35/46;H01B3/00 主分类号 C04B35/46
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