Method of manufacturing semiconductor devices in which a surface of a semiconductor structure is selectively treated.

摘要

Surface features of a semiconductor structure above a predetermined level are exposed for selective treatment (eg., etching) by forming a layer of a solvent-expanded polymer on the surface of the sturcture, and allowing the layer to dry and cure, thereby relaxing to the predetermined level, at which it protects the underlying structure during treatment. Subsequently, the protective layer is removed by rinsing in a solvent.