| 摘要 |
PURPOSE:To prevent charging of a material to be measured due to a positive ion beam effectively and to improve the measuring accuracy of the wave form of secondary electrons, by providing an ion source emitter, which emits a positive ion beam, in an electron beam apparatus, which has an electron beam generating source, a secondary electron collector and a control part that converts the secondary electrons into a potential and measures the waveform of the potential. CONSTITUTION:An electron beam generating source 4 emits an electron beam 5. A secondary electron collector 12, collects secondary electrons S generated from a material to be measured 9 by the projection of the electron beam 5. A control part A converts the secondary electrons, which are collected with the secondary electron collector 12, into a potential and measures the waveform of the potential. An ion source emitter 13 emits a positive ion beam 14. For example, the ion source emitter 13 is provided on the sidewall of a housing 3 of an electron beam tester 1, which measures the state of wiring that is formed on the surface of a semiconductor device based on the projection of the electron beam. The ion source emitter 13 is also controlled with the control part A. The control is performed so that the positive ion beam 14 is projected during the period the projection of the electron beam 5 from an electron gun 4 is stopped. |
