发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make it possible to recover a transistor, which is regarded to have short-circuit defect, when crossed conductors are brought into contact, by applying an overvoltage to the conductors, breaking the surfaces of the conductors at the contact parts, and separating the conductors. CONSTITUTION:A semiconductor element is mounted on an island, which also serves the role of a heat sink. Conductors 1, by which the semiconductor element and outer leads are connected, are crossed at least at one place in a semiconductor device. When the crossed conductors 1 and 1 are brought into contact, an overvoltage is applied to the conductors 1 so that parts of the surfaces of the contact parts of the conductors 1 are fused and cut. Thus the conductors 1 and 1 at the contact parts are separated. For example, a switch 5 is changed, and the voltage is charged into a capacitor 3 from a power source 3. Then, the switch 5 is changed into a base terminal of the semiconductor element 2. The overvoltage, which is charged in the capacitor 3, flows into the emitter terminal at a ground level from the base terminal instantaneously. Thus the surfaces of the conductors 1 in contact are fused and separated.
申请公布号 JPS6421934(A) 申请公布日期 1989.01.25
申请号 JP19870177484 申请日期 1987.07.16
申请人 SANYO ELECTRIC CO LTD 发明人 SHIGETA NORIHIRO;YOSHII MASURAO;HOSHIMOTO HIROYUKI
分类号 H01L21/60 主分类号 H01L21/60
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