| 摘要 |
<p>A method for manufacturing a bonded semiconductor body includes the steps of adhering or contacting the flat mirror surfaces of semiconductor substrate wafers (1 and 2) used as semiconductor element substrates, and subjecting the adhered semiconductor substrate wafers (1 and 2) to a heat treatment at a temperature higher than 200 DEG C and lower than the melting point of the semiconductor substrate wafers (1 and 2) to bond the mirror surfaces. The surface roughness of each of the mirror surfaces of the semiconductor substrate wafers (1 and 2) is set not more than 130 ANGSTROM in its maximum value when measured in a range of 1 mm on a reference plane provided in a predetermined area of the mirror surface.</p> |
