Semiconductor device with a sidelong contact structure, and its manufacture.

摘要

A semiconductor device comprising a first region (3), which is laterally bounded by a second region comprising a countersunk oxide layer (5) and a highly doped polycrystalline silicon layer (6), which is disposed thereon and is covered by an oxide layer (7) partly countersunk into it. The side edge of the polysilicon layer (6) adjoins a contact zone (8), which is obtained by diffusion therefrom and is connected via a current path to a zone (9) of a semiconductor circuit element. According to the invention, the upper side of the polysilicon layer (6) is located at a higher level than that (2) of the first region (3) and the contact zone (8) is connected to the said zone (9) of the semiconductor circuit element via an intermediate region (20) located in the first region (3) below the second oxide layer (7) and having a lower doping than the contact zone (8).