发明名称 SYNTHESIS OF COMPOUND SEMICONDUCTOR
摘要 PURPOSE:To prevent breakage of a reaction vessel and to shorten the time for synthesis by determining a pressure corresponding to the pressure in a closed vessel contg. >=2 kinds of element sealed therein from the vapor pressure of the raw material element, and applying the determined pressure from outside of the vessel and proceeding the reaction. CONSTITUTION:Cd as a group II element is mixed with Te as a group VI element in a chemical equivalent ratio, and the mixture is sealed in an evacuated quartz ampule 4, and the ampule 4 is housed in a vessel 1 resistant to high pressure together with a heater 5. Gaseous N2 compressed with a compressing device 3 to 3atm., which is about 1/2 of the vapor pressure of Cd in the ampule, is supplied previously to the vessel 1. When the temp. of the ampule 4 reaches near the m.p. of Te (about 450 deg.C) by heating the ampule 4 with the heater 5, the electric power to be supplied to the heater 5 is reduced, and the pressure in the vessel 1 is increased to 5atm. with the compressing device 3. Thereafter, the reaction is settled setlling also the temp. followed by slow fall of the temp., the temp. of the ampule 4 is elevated to >=1,092 deg.C to melt thus the formed compd.
申请公布号 JPS6422339(A) 申请公布日期 1989.01.25
申请号 JP19870178210 申请日期 1987.07.17
申请人 NIPPON MINING CO LTD 发明人 SAKAI HIDEKI;URA MITSURU
分类号 B01J3/00;C01B19/04;C30B29/48 主分类号 B01J3/00
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