| 摘要 |
PURPOSE:To prevent breakdown of electrodes during the abnormal condition wherein a gate current or a drain current during breakdown flows, by forming a superconductor thin film which shows a superconducting condition at a room temperature directly or through other metal thin film on any of the gate electrode, source electrode or drain electrode. CONSTITUTION:A source electrode 1, gate electrode 2 and drain electrode 3 are respectively formed through a semiconductor insulation layer 4 on an insulating substrate 5 of semiconductor contact type FET. A superconductor thin film 8 which shows superconductivity at a room temperature is formed directly or through a metal thin film on any electrode (gate electrode 3 in this case) among such electrodes 1-3. Thereby, electrical breakdown of gate electrode, source electrode and drain electrode can be prevented adequately even in such abnormal condition where a gate current flows or a drain current flows during breakdown. |
