发明名称 |
Process for preparing Si or Ge epitaxial film using fluorine oxidant |
摘要 |
Process for producing a valence electron controlled functional crystalline film by introducing (i) a film forming gaseous raw material, (ii) a halogen series gaseous oxidizing agent to oxidize the raw material (i), and (iii) a gaseous raw material to impart a valence electron controlling agent separtely into a reaction region of a film deposition space and chemically reacting them to generate plural kinds of precursors containing excited precursors and to let at least one kind of said precursors to act as a film forming supplier whereby said crystalline film is formed on a selected substrate being kept at a predetermined temperature in the film deposition space.
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申请公布号 |
US4800173(A) |
申请公布日期 |
1989.01.24 |
申请号 |
US19870015951 |
申请日期 |
1987.02.18 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KANAI, MASAHIRO;HANNA, JUNICHI;SHIMIZU, ISAMU |
分类号 |
C23C16/452;C30B25/02;C30B25/14;H01L21/203;H01L21/205;H01L21/365;(IPC1-7):H01L21/205 |
主分类号 |
C23C16/452 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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