发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device comprises: a charge holding capacitor formed on a semiconductor substrate; an insulating layer formed on the capacitor; and a transistor formed on a monocrystalline or substantially monocrystalline semiconductor layer, which is provided by forming, on the insulating layer, a hetero material of a nucleation density sufficiently higher than that of the insulating layer and of a size smaller enough to allow growth of a single nucleus of a semiconductor layer, followed by crystal growth around a single nucleus formed on the hetero material.
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申请公布号 |
US4800527(A) |
申请公布日期 |
1989.01.24 |
申请号 |
US19870111588 |
申请日期 |
1987.10.23 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
OZAKI, MASAHARU;YONEHARA, TAKAO |
分类号 |
H01L27/10;H01L21/20;H01L21/8242;H01L27/108;(IPC1-7):G11C13/00;G11C11/24 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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