| 摘要 |
PURPOSE:To improve the integration of a semiconductor device by opposing at least one opposed part of two second conductive type layers formed oppositely on the first conductive type surface layer at the flat surface having cut corners or the slowly curved surface, thereby reducing the interval of elements. CONSTITUTION:An isolation P type layer 3 for isolating an N type layer 2 into several insular regions is connected to an external terminal (GND terminal), and a bonding pad 4 is connected through aluminum wirings 5 to the diffused layer (P type layer) of the internal element. A P type diffused resistor 9 as one of the internal elements is connected through a contacting hole 10 to the wirings 5. Electrostatic breakdown preventive element 11 is composed of a P type diffused layer 6 and an N type diffused layer 7, and connected through the contacting hole 10 to the aluminum wirings 5, 8. The opposed parts of the layer 6 of the element 11 and the layer 3 are cut at the corners to oppose at the flat surfaces, and the part having the contacting hole of the resistor 9 and the part opposed to the layer 3 are cut at the corners. The interval between the diffused layers can be reduced by cutting the corners, thereby improving the integration. |
