| 摘要 |
PURPOSE:To stepwise form the shape of a pattern end, to improve the uniformity and the shape of the thickness of an Si oxide film and to prevent the stepwise disconnection of wirings by employing a photoresist film and the Si oxide film as the masking material of a polycrystalline Si film. CONSTITUTION:An Si oxide film or nitride film is formed as an insulating film 16 on a semiconductor substrate 11, and a polycrystalline Si film 12, an Si oxide film 13 and a photoresist pattern 14 are formed thereon. With the film 14 as a mask the films 13, 12 are etched by anisotropic plasma etching to etch the film 12 approx. 0.2mum. Then, with the film 14 as a mask the film 13 is etched from its side face, Thereafter, with the film 13 as a mask the remaining film 12 is removed by etching. Subsequently, the film 13 is removed, and an Si oxide film 17 is formed on the film 12. Then, a semiconductor device is formed through the following steps by a conventional method. |
