METHOD FOR SELECTIVELY GROWING THIN METALLIC FILM

摘要

PURPOSE:To selectively grow a thin tungsten film on a specified part on a substrate by keeping the substrate at a prescribed low temp. until a specified base exposed surface is covered with a tungsten film during film formation. CONSTITUTION:When selective vapor growth of a tungsten film is carried out with gaseous tungsten halide and H2 as starting materials, a substrate is kept at a low temp. of <=250 deg.C in the early stage of film formation and a tungsten film is grown until at least the base exposed surface is covered with the film in the early stage. The substrate is then heated to a temp. at which a film is formed at a high rate and film formation is continued until a prescribed film thickness is obtd. Thus, selective vapor growth of a tungsten film is carried out only on a specified base on the substrate.