发明名称 POLISHING METHOD FOR CRYSTAL
摘要 <p>PURPOSE:To obtain a mirror wafer and prevent the corrosion of a polishing device by using alkyl trimethyl ammonium halogenide or trimethylamino ethylalkylamino halogenide as the solute of a polishing liquid. CONSTITUTION:Tetramethyl bromide ammonium is used as alkyl trimethyl ammonium halogenide, and it is diluted with water to generate a polishing liquid of about 20-80% solution. A rotary disk type polishing machine provided with a polishing surface plate with the diameter of about 600mm and an adhesive board sticking crystals is used to polish an InP wafer. A polishing cloth is stuck on the polishing surface plate, the InP wafer is stuck on the adhesive board, this polishing liquid is dripped on the polishing cloth at the flow speed of about 30ml/min, the InP wafer is pressed to the polishing cloth of the polishing surface plate rotated at about 90rpm with the face pressure of about 30g/cm<2> and revolved by the friction force and polished. As a result, a good mirror wafer with no crack, tarnish, peripheral sag, and irregularity is obtained.</p>
申请公布号 JPS6420966(A) 申请公布日期 1989.01.24
申请号 JP19870174729 申请日期 1987.07.15
申请人 HITACHI CABLE LTD 发明人 TANI TAKEHIKO;INADA TOMOKI
分类号 H01L21/304;B24B37/00 主分类号 H01L21/304
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