| 摘要 |
The present invention relates to a radiation-sensitive positive resist comprising a copolymer obtained by copolymerizing 2,2,2-trifluoroethyl alpha -chloroacrylate with 2,2,3,3-tetrafluoropropyl alpha -chloroacrylate at a weight ratio of between 90:10 and 50:50 and a radiation-sensitive positive resist composition essentially comprising said copolymer and a solvent containing methyl cellosolve acetate as a major component. The resist and the resist composition according to the present invention exhibit high sensitivity and excellent reproducibility, so that they are useful in the production of a photo mask which is used in the production of LSI, VLSI and the like.
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