| 摘要 |
PURPOSE:To obtain intergranular insulation type semiconductor porcelain having high apparent dielectric ratio and small high harmonic distortion by insulating it such that a mol ratio of Sr1-xMx site to Ti site in its crystal grain boundary is set larger than that in the peak of apparent dielectric ratio. CONSTITUTION:When x exceeds 0.5 in a main component (Sr1-xMx)TiO3, dielectric loss becomes greater, while if a subcomponent is below 0.05mol%, apparent dielectric ratio is becomes smaller, and it is not desirable that insulation resistance value becomes lower when the subcomponent exceeds 2.0mol%. Further, it is also not desirable for an oxydization agent comprizing only oxides of Sr, Ca, Ba which are elements of A site side, because its melting point is high, dispersion to grain boundary is insufficient, and insulation to the grain boundary is not enough. On the other hand, it is possible to obtain intergranular insulation type semiconductor porcelain having a high dielectric ratio but a small high harmonic distortion by the use of such oxidization agent obtained by mixing at least one kind M selected among the oxides such as Sr, Ca and Ba with at least one kind selected among oxides such as Pb, Bi, Na, V and Zr. |
