| 摘要 |
PURPOSE:To obtain highly reliable and high performance electrode protection film which has dramatically improved moisture resistance, impact resistance and plasma damage resistance by utilizing a triple-laminated film with a nitride film used as the intermediate film as the insulating film for protecting the surface of electrode of MOS LSI. CONSTITUTION:As a starting material, a material wherein a plurality of N-channel MOS transistors are provided on the P type silicon wafer 1 is used. A triple- laminated film where the insulating films 10, 12 of the PSG film, etc. are provided as the upper and lower layers of the nitride film 11 is used as the insulating film which protects the surface of electrode. With the PSG pattern 12 of upper layer used as the mask, the intermediate nitride film 11 is etched, and with the PSG film 12 of upper layer and the nitride film 11 used as the mask, the lower PSG film is removed by etching. Thereby, electronic component parts having good characteristic can be obtained. |
