| 摘要 |
<p>PURPOSE:To facilitate application of a photosensor under severe conditions by a method wherein an insulating layer and a metal layer are successively built up on a semiconductor layer and the insulating layer is made of photoconductive material. CONSTITUTION:An insulating layer 3 and a metal layer 4 are successively built up on a semiconductor layer 2 and the insulating layer 3 is made of photoconductive material. For instance, a MIS structure is formed by building up the photoconductive amorphous SiC layer 3 on the single crystal SiC layer 2 to provide the function of a photosensor. With this constitution, a photosensor which can be used under the conditions under which a conventional photosensor using Si and the like can not be used can be manufactured and, further, the application range of SiC semiconductor to devices can be widened.</p> |
