| 摘要 |
PURPOSE:To enhance the reproducibility of a process and the reliability of a groove capacitor by a method wherein an insulator film, a conductor film and a filler are formed continuously in a formed groove, said groove is filled and a phosphorus-doped polysilicon film is cut between adjacent memory cells. CONSTITUTION:After an insulator film 202 has been formed on a P-type silicon crystal substrate 201, grooves 203 are formed by an anisotropic etching method. The surface of the substrate is oxidized; a silicon oxide film 204 is formed; a phosphorus-doped polysilicon film 205, a composite film 206 composed of silicon oxide and silicon nitride and a phosphorus-doped polysilicon film 207 are formed; undoped polysilicon 208 is filled into the remaining grooves. After that, the phosphorus-doped polysilicon film 207 is cut between adjacent memory cells; a glass film and an aluminum film are formed. By this setup, cell capacitors of the adjacent memory cells can be easily insulated; a process inside the grooves is eliminated; accordingly, the reproducibility of the process and the reliability of a groove capacitor are enhanced. |
