| 摘要 |
PURPOSE:To cut down the cost of raw material by a method wherein a sheet of diffusion-processed semiconductor wafer is divided into two parts using a cutting device, then they are finished up to have a prescribed thickness, and the polishing period is shortened. CONSTITUTION:In the cutting process S11, a single crystal silicon ingot is sliced somewhat thickly into wafers, and a chamfering work is conducted on the circumference of the wafers cut in the chamfering process S12. Then, the surface of the wafers is polished in the lapping process S13, the surface worked in previous process of the wafers is removed in the etching process S14, and after a smooth surface has been obtained, the wafer is washed with the cleaning water. Then, a diffusion process S16 is conducted in the prescribed gas while the wafer is being heated. Subsequently, the diffused wafer is divided into two parts to have the prescribed thickness, then the water is polished in the polishing process S18 until the prescribed thickness is obtained, the surface of the wafer is mirror-polished, and a diffused wafer is completed.
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