| 发明名称 |
METHOD OF FORMING OHMIC CONTACTS |
| 摘要 |
<p>A method of forming ohmic contacts with thin film p-type semiconductor Class II B - VI A compounds comprising etching the film surface with an acidic solution, then etching with a strong basic solution and finally depositing a conductive metal layer.</p> |
| 申请公布号 |
IN164151(B) |
申请公布日期 |
1989.01.21 |
| 申请号 |
IN1984MA46019 |
申请日期 |
1984.06.26 |
| 申请人 |
SOHIO COMMERCIAL DEVELOPMENT COMPANY;BP PHOTOVOLTAICS LIMITED |
发明人 |
BULENT M. BASOL |
| 分类号 |
H01L29/40;H01L21/28;H01L21/306;H01L21/443;H01L21/465;H01L31/04;(IPC1-7):H01L31/18 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
