| 摘要 |
PURPOSE:To provide a thin film superconductor having a high critical temperature and a less aged deterioration, by interposing Me0.5Ln0.5CoO3 layers between oriented LnAlO3. CONSTITUTION:An epitaxial growth is made in such a manner that two Me0.5 Ln0.5CoO3 metal conductive layers are interposed between semiconductor layers of LnAlO3 oriented (100) on a substrate can be obtained. Ln represents any of Bi, Y or lanthanide rare earth and Me represents any of Ca, Sr or Ba. Then, when annealing is carried out in air, a stable state of a semiconductor through which almost no air passes. With this arrangement, an oxygen defect is reduced, anisotropy is eliminated, an aged deterioration is reduced, and a high critical temperature can be obtained. |
