| 摘要 |
The present invention relates to a photolithography process. This method consists: - in depositing a resin 4 over the entire surface to be treated, the resin having zones of different thicknesses E, e, and then, - for a given final pattern, in selectively exposing the resin as a function of the thickness of the zones to be treated, so as to avoid over-exposure of the thin zones. The invention is used in manufacturing semi-conductor components. <IMAGE>
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