| 摘要 |
PURPOSE:To reduce a band gap of a tunnel region and to reduce writing/erasing voltages by forming the tunnel region between a nitride film to be injected with charge and a substrate of a 2-layer structure of the nitride film in contact with the substrate and an oxide film. CONSTITUTION:A first nitride film 13 in contact with a silicon substrate 1 is formed over between a source region S and a drain region D on the substrate 1, a second nitride film 15 is formed through a first oxide film 15 on the film 13, and a control gate 6 is formed through the film 12 on the film 15. Thus, when a tunnel region between the film 15 to be injected with charge and the substrate 1 is formed of a 2-layer structure of the films 13, 14, the band gap of energy in the tunnel region can be reduced. As a result, writing/erasing voltages can be reduced. |
