| 摘要 |
<p>PURPOSE:To increase a current flowing to a memory cell block, and to contrive to improve a read-out speed by providing a bit check use transistor for storing an assignment state of the data of the memory cell block, between a selection use transistor and a memory cell use transistor. CONSTITUTION:Between a selection use MOS transistor S1 and a memory cell use MOS transistor M1, a bit check use MOS transistor CT which is brought to a conduction control by a signal C is provided. This bit check use MOS transistor CT stores which of the stored data having more '1' or '0' in one memory cell block 11 has been assigned to a depression type MOS transistor. Accordingly, half or more of the memory cell use MOS transistors for constituting one memory cell block can be formed to the depression type. In such a way, a current flowing to the memory cell block can be increased and set, and also, for a load MOS transistor L1, as well, that of a large current driving capacity can be used, therefore, read-out can be executed at a high speed.</p> |
