| 摘要 |
<p>PURPOSE:To make it possible to improve the resistance to breakdown without causing the deterioration in the detecting sensitivity of a semiconductor substan tially, by smoothing the corner of a boundary part among an overlapping part, a supporting part and a cantilever part. CONSTITUTION:When an anisotropic etching treatment is applied to a semiconductor substrate (serving also as a supporting part) 1', the etched part melts in the specific direction of a crystal. When an isotropic etching treatment is applied to the part subjected to the anisotropic etching treatment in addition, the part melts uniformly in all directions. Thereby the corner of a cut part formed by the anisotropic etching treatment is rounded to have a smooth curved shape. In other words, a corner 7a of a part of connection of an overlapping part 4' with a cantilever part 3' and a corner 7b of a part of connection of a supporting part 1' with the cantilever part 3' are formed in the smooth curved shape. A stress given to the curved part disperses uniformly to the whole of this part. Consequently, the resistance to breakdown is improved.</p> |
