| 摘要 |
<p>PURPOSE:To supply an unreacted raw gas uniformly on the whole surface of a substrate, by supplying the raw gas from the lower side of a vertical type reaction tube and tapering the reaction tube in the vicinity of a substrate holder and also smoothly tapering the substrate holder. CONSTITUTION:A raw gas 108 is supplied in the form of a smooth layer flow from a lower side of a vertical type reaction tube 101. Then the reaction tube 101 is tapered in the vicinity of a holder 102 of a semiconductor substrate 104. The substrate holder 102 is also tapered more smoothly than the reaction tube 101. Hence the raw gas which touches the surface of the semiconductor substrate and finishes a chemical reaction to be heated, is moved quickly to an upward exhaustion system. A layer flow in the vicinity of the surface of the semiconductor substrate is not disturbed, and at the same time the tapered shapes of the reaction tube 101 and the substrate holder 102 permit an unreacted raw gas to be supplied uniformly to the whole surface of the semiconductor substrate.</p> |
