| 摘要 |
PURPOSE:To enable an intense current to be supplied without obstructing high integration by a method wherein a piezo-electric body layer and an electrode are successively formed on a channel region comprising super conductor layer. CONSTITUTION:A channel region C and source drain regions A, B comprising Y-Ba-Cu-O superconductive layer 9 are formed on a silicon wafer 8. When the superconductive layer 9 is in the superconductive state, electrons in any level as necessary can be fed without generating any heat from the source A to the drain B or vice versa. When a voltage is impressed from an electrode 11 to a piezoelectric body 10, the vibration in the piezoelectric body 10 is transmitted to the region C in the superconductor layer 9 to bring about the constant conductive state in the region C resultantly reducing the electrons running between the source A and the drain B notably. In such a constitution, there is neither any overlap holding the piezoelectric body 10 between the source A, the drain B and the electrode 11 or any parasitic capacity in principle so that any spike, etc., resultant from ON, OFF operations may not occur making circuit operation at higher speed feasible. |
