| 摘要 |
PURPOSE:To obtain a thin film transistor (TFT) wherein the high density integration is possible and the cost is low by the effect of small-sized device, by forming at least two or more transistors on the same poly-Si layer. CONSTITUTION:On a quartz substrate 1, is arranged a poly-Si layer 2 turning to an active layer. Thereon, a transistor is formed. That is, on the poly-Si layer, a gate SiO2 film 3 is formed, and thereon two gate electrodes 4 are arranged, which are covered with an interlayer insulating film 5. Contact holes are made in a part of the interlayer insulating film 5, on which a common metal wiring 6 is formed. This constitution is applicable not only to a CMOS but also to the case where two or more active devices such as transistor and diode, and passive devices are formed on the same poly-Si layer. |
