| 摘要 |
<p>PURPOSE:To enable the highly accurate alignment, and facilitate the high density integration, by constituting an optical isolator type photocoupler wherein a light emitting diode composed of amorphous silicon carbide is stacked on a photo transistor via a transparent insulating film. CONSTITUTION:Since a phototransistor 10 part is identical to a bipolar silicon transistor, it can be completed by defining the respective regions of collector, base and emitter, and forming the respective electrodes 2E, 3E and 4E. Instead of coating with an insulative cover film, a transparent resin film 20, which transmits a light, is stuck, and silicon resin, e.g., is used for the above resin film 20. In order to form a light emitting diode 30 part, an ITO film 31 is stuck by sputtering method, and then an amorphous carbide film is grown by plasma vapor growth method, wherein a substrate is heated at 180 deg.C, reaction gas is introduced at a reduced pressure degree of about 0.4 Torr, and high frequency electric power of 0.1watt/cm<2> is applied for the growth.</p> |
