| 摘要 |
PURPOSE:To improve sensitivity without sacrificing resolution without generating any thermal decomposition of the photosensitive group of a resist by applying a resist onto a layer to be worked, exposing the resist to a vacuum atmosphere at room temperature or irradiating the resist with light having a wavelength different from that of a photosenstive range, charged beams, etc., instead of heat treatment, to evaporate the solvent of the resist. CONSTITUTION:The upper section of a layer 2 to be worked such as a metallic layer spread onto a semiconductor substrate 1 is spin-coated with a resist 3. The semiconductor substrate 1 is positioned in a vacuum, and held at room temperature, thus evaporating a solvent contained in the resist 3. The resist is exposed by ultraviolet rays, and a section exposed through development treatment is melted and removed, thus shaping a fine pattern. That is, since the resist is dried by holding at room temperature in the vacuum, no heat treatment is applied before the pattern is formed, and no sensitive group in the resist is decomposed. Visible rays with wavelengths older than the photosensitive wavelength, charged beams, etc., beside said method also display the same effect for drying the resist 3. |
