| 摘要 |
PURPOSE: To form the emitter-base junction of a bipolar transistor and the source-drain junction of a MOS transistor through the minimum number of processes by removing an unreacted high-melting point metal after an impurity which is injected into a silicide layer formed on the base and emitter areas of the bipolar transistor and the source-drain area of the MOS transistor is diffused in a substrate below the silicide layer. CONSTITUTION: A gate electrode 48 is formed in a MOS transistor by patterning the apertures 44 of an emitter and base on the surface of a bipolar transistor area and depositing a titanium layer 66 on the entire surface of the bipolar transistor area by sputtering, and then, forming a titanium silicide sections 68, 70, 74, and 76 in the exposed sections on the surface of silicon and polycrystalline silicon by treating the titanium of the layer 66. Then metallic junctions 104, 106, 108, and 110 are formed below the silicide layer by injecting a p-type impurity into the base of the bipolar transistor and the source-drain area of the MOS transistor and diffusing an impurity buried in the silicide layer in a substrate by driving-in the impurity downward in an annealing process.
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