| 摘要 |
PURPOSE:To shorten largely the production time of a mask for X-ray exposure, and to form easily a window, etc., close to a true circle which has been difficult to be shaped in anisotropic etching by applying an ultrasonic grinding working method, an air spindle grinding working method, etc., as a mechanical grinding means, not a chemical etching means. CONSTITUTION:When an X-ray absorber pattern is shaped and a window section is formed, the X-ray absorber pattern 6 is protected by a pattern protective layer 12, and the side of the X-ray absorber pattern 6 is stuck and fixed to a holding substrate 14 through an adhesive layer 13. A protective-mask material layer section corresponding to the window section and the greater part of an silicon wafer section are ground and removed circularly, leaving an silicon diaphragm along an X-ray transmitting film through an ultrasonic grinding working technique vertically moved while the pattern 6 is turned together with the holding substrate 14 and a spindle 15 is rotated simultaneously, and the adhesive layer 13 is melted and isolated. The silicon diaphragm 10 is chemically etched and gotten rid of by a potassium hydroixde aqueous solution, using the left protective-mask material layer section 5 as an etching mask. |
