发明名称 MANUFACTURE OF OXIDE SUPERCONDUCTOR THIN FILM
摘要 PURPOSE:To obtain a good thin film with the high superconductive critical temperature and good homogeneity by concurrently spattering the first target made of an oxide with the same component as that of the desired thin film and the second target made of a metal element lacking as a result of thin film formation or its oxide and depositing the thin film on a substrate. CONSTITUTION:A target made of a metal element lacking as a result of thin film formation or its oxide and a target made of an oxide with the same component as that of the desired thin film are concurrently spattered to prevent the composition drift caused by the thin film deposition. A Y1Ba2Cu3O4 sintered body target and a Cu target are prepared, for example, and installed on a twin magnetron cathode in a vacuum device. The high-frequency voltage of 13.56MHz is applied to the sintered body target, and the DC voltage is applied to the Cu target respectively, Art+50%O2 is used for the spattering gas, and they are concurrently spattered at the gas pressure of 4Pa and the substrate temperature of 600 deg.C. The thin film is thereby obtained with good reproducibility.
申请公布号 JPS6414821(A) 申请公布日期 1989.01.19
申请号 JP19870170495 申请日期 1987.07.08
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 ASANO HIDEFUMI;TANABE KEIICHI;KATO YUJIRO;KUBO SHUGO;MICHIGAMI OSAMU
分类号 C23C14/08;C23C14/34;C30B29/22;H01B12/06;H01B13/00;H01L39/12 主分类号 C23C14/08
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