| 摘要 |
PURPOSE:To manufacture a single wavelength oscillating semiconductor laser device for single wavelength oscillation during high output operation by a method wherein the coupling constant of light and diffraction grating is made lower in the central part and higher in the vicinity of the edge face of a resonator. CONSTITUTION:The level of diffraction grating 2 in the central part of an element is lowered than that in the vicinity of the edge face of a resonator. Thus, the coupling constant K in the central part of element is made smaller than the coupling constant K in the vicinity of the edge face 6 of resonator. At this time, the light emitted from an active layer 4 is not confined only in the central part of element by the diffraction grating 2 in the central part of element but mostly advances to the parts near the edge face 6 of resonator to be reflected by the diffraction grating 2. Consequently, the light intensity is high not only in the central part of element but is uniform all over the element. Thus, during the high output operation, the light intensity is not partially too high to cause multiwavelength oscillation. |
