| 摘要 |
PURPOSE:To obtain a high quality crystal of a semiconductor of a III-V group compound contg. Al and other III group elements by an epitaxial growing method, by using an organoaluminum compound as a starting material for Al and halides of other III group elements as starting materials for the elements. CONSTITUTION:Gaseous H2+PH3, H2+Al(CH3)3, H2+HCl and H2 are introduced into a reaction tube 1 heated to several 100 deg.C with an electric furnace 13 from introducing holes 2, 3, 4, 14, respectively. The PH3 is thermally decomposed to form a mixture of P2 with P4 and H2. The Al(CH3)3 is thermally decomposed and reacts with H2 to form a mixture of atomic gaseous Al with CH4. HCl forms GaCl by reaction with Ga 7 on a boat 6 and InCl by reaction with In 9 in a boat 8. The atomic Al forms AlCl3 and AlCl by reaction with HCl. The chlorides of Ga, In and Al form InxGayAl1-x-yP by reaction with P molecules. |
