摘要 |
<p>In a semiconductor integrated circuit device having a memory area (M-ARY), means for changing-over address signals is provided in an address input portion, and the order of the signals to be input to an address decoder (DCR) is changed according to external control signals (epm,epm). Alternatively, a reading output circuit is provided which reads data in bit unit different from that of the writing input circuit. Thus, data can be read and written even when the number of bits of data differs between in case of accessing a built-in memory of an LSI inside the LSI and in case of accessing it from outside the LSI.</p> |
申请人 |
HITACHI, LTD.;HITACHI VLSI ENGINEERING CORPORATION |
发明人 |
MATSUO, AKINORI;FUJIMOTO, MICHIO;WATANABE, MASASHI;WADA, MASASHI;NAGAYAMA, YOSHIHARU;NAITO, KAZUO |