| 摘要 |
<p>A process for deposition of silicon oxide films which utilizes the combination of remote (1326) and in situ plasma (1314, 1312) in a low pressure process module (1300) and the plasma is generated form a mixture of Helium, a source of oxygen, for example, O2, N2O, CO2 and NO2, and monosilane, for example, SiH2Cl2 or SiH4.</p> |
